Figure 2.

Schematic of two groups of QD samples with the structures of: (A) 1.5-nm InGaN sandwiched between 1 GaN layers (Sample A); (B) 3 nm InGaN sandwiched between 2-nm GaN layers (Sample B).

Liu et al. Nanoscale Research Letters 2011 6:342   doi:10.1186/1556-276X-6-342
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