Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
1 Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
2 Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin - Madison, Madison, WI, 53706, USA
Nanoscale Research Letters 2011, 6:342 doi:10.1186/1556-276X-6-342Published: 15 April 2011
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiNx layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiNx-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.