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Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

Caihong Jia12, Yonghai Chen1*, Yan Guo1, Xianglin Liu1, Shaoyan Yang1, Weifeng Zhang2 and Zhanguo Wang1

Author affiliations

1 Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083, PR China

2 Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics Electronics, Henan University, Kaifeng 475004, PR China

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Citation and License

Nanoscale Research Letters 2011, 6:316  doi:10.1186/1556-276X-6-316

Published: 8 April 2011


X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found that a type-I band alignment forms at the interface. The valence band offset (VBO) and conduction band offset (CBO) are determined to be 2.25 ± 0.09 and 0.15 ± 0.09 eV, respectively. The experimental VBO data is well consistent with the value that comes from transitivity rule. The accurate determination of VBO and CBO is important for use of semiconductor/ferrroelectric heterojunction multifunctional devices.