An investigation into the conversion of In2O3 into InN nanowires
1 Department of Physics, Research Centre of Ultrafast Science, University of Cyprus, P.O. Box 20537, Nicosia, 1678, Cyprus
2 Nanostructured Materials and Devices Laboratory, Department of Mechanical Engineering, Materials Science Group, School of Engineering, University of Cyprus, P.O. Box 20537, Nicosia, 1678, Cyprus
Citation and License
Nanoscale Research Letters 2011, 6:311 doi:10.1186/1556-276X-6-311Published: 7 April 2011
Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL.