Table 1

Processing conditions used for depositing the VO2 films

W- and Mo-doped films

Nb-doped films


Base pressure (mbar)

3 × 10-5

3 × 10-5

Work pressure (mbar)

4 × 10-3

1 × 10-3

Oxygen/argon ratio (%)

14.3

50

Total gas flow (sccm)

19.2

6

DC current (A)

0.5

-

Pulsed-DC current (A)

-

0.58

Frequency (kHz)

-

10

Reverse time (μs)

-

5

Substrate temperature (°C)

450

450

Deposition time (min)

5

3


Batista et al. Nanoscale Research Letters 2011 6:301   doi:10.1186/1556-276X-6-301

Open Data