Table 1 |
||
|
Processing conditions used for depositing the VO2 films |
||
|
W- and Mo-doped films |
Nb-doped films |
|
|
|
||
|
Base pressure (mbar) |
3 × 10-5 |
3 × 10-5 |
|
Work pressure (mbar) |
4 × 10-3 |
1 × 10-3 |
|
Oxygen/argon ratio (%) |
14.3 |
50 |
|
Total gas flow (sccm) |
19.2 |
6 |
|
DC current (A) |
0.5 |
- |
|
Pulsed-DC current (A) |
- |
0.58 |
|
Frequency (kHz) |
- |
10 |
|
Reverse time (μs) |
- |
5 |
|
Substrate temperature (°C) |
450 |
450 |
|
Deposition time (min) |
5 |
3 |
|
|
||
|
Batista et al. Nanoscale Research Letters 2011 6:301 doi:10.1186/1556-276X-6-301 |
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