Figure 4.

GeNW-positioned Schottky solar cell. (a) A schematic of the multiple GeNWs Schottky device (Al-GeNWs-Pt). (b) SEM image showing the GeNWs in contact with the Pt and Al electrodes. (c) The dark I-V characteristics of the multiple GeNWs device show Schottky diode performance similar to the single GeNW. (d) Under one-sun illumination, the Schottky device yields a Voc of 177 mV and an Isc of 19.2 nA.

Yun et al. Nanoscale Research Letters 2011 6:287   doi:10.1186/1556-276X-6-287
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