Figure 2.

Schottky junction diode for single GeNW. (a) A schematic diagram of the three-pairs of Ti metal platforms. The solution containing GeNWs was dropped while the centrally located metal pairs were ac-biased to position the GeNWs in the designated location. (b) The configuration of the e-beam processed Al and Pt electrodes on the GeNW. (c) SEM image of the configuration. (d) An enlarged image of (c) showing the GeNW alternating contact with the Pt and Al electrodes.

Yun et al. Nanoscale Research Letters 2011 6:287   doi:10.1186/1556-276X-6-287
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