Origins of 1/f noise in nanostructure inclusion polymorphous silicon films
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China
2 Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
3 Department of Electronics and Information, Hang Zhou Dianzi University, Hangzhou, 310018, China
Nanoscale Research Letters 2011, 6:281 doi:10.1186/1556-276X-6-281Published: 4 April 2011
In this article, we report that the origins of 1/f noise in pm-Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, αH, is independent of doping ratio. The 1/f noise power spectral density and noise parameter αH are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm-Si:H film resistor were obtained through linear current-voltage measurement. The 1/f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.