Figure 1.

Schematic representation of Bi₂Te₃ nanowire synthesis method. Step 1: Bi nanowires are grown on the oxidized Si substrate by the OFF-ON method. Step 2: Bi₂Te₃ is deposited onto the substrate containing the Bi nanowires by in situ RF sputtering, which forms Bi-Bi₂Te₃ core/shell nanowires. Homogeneous Bi₂Te₃ nanowires are synthesized during the vacuum annealing at 350°C.