Figure 1.

Schematic representation of Bi2Te3 nanowire synthesis method. Step 1: Bi nanowires are grown on the oxidized Si substrate by the OFF-ON method. Step 2: Bi2Te3 is deposited onto the substrate containing the Bi nanowires by in situ RF sputtering, which forms Bi-Bi2Te3 core/shell nanowires. Homogeneous Bi2Te3 nanowires are synthesized during the vacuum annealing at 350°C.

Kang et al. Nanoscale Research Letters 2011 6:277   doi:10.1186/1556-276X-6-277
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