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Simple two-step fabrication method of Bi2Te3 nanowires

Joohoon Kang, Jin-Seo Noh and Wooyoung Lee*

Author Affiliations

Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea

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Nanoscale Research Letters 2011, 6:277  doi:10.1186/1556-276X-6-277

Published: 4 April 2011


Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.