Optical and AFM images of O2 etched striped in graphitized 4H-SiC. Optical image on the sample annealed at 1700°C (a). AFM height profile taken on a stripe on pristine SiC (b) and on the sample annealed at 1700°C (c), respectively.
Vecchio et al. Nanoscale Research Letters 2011 6:269 doi:10.1186/1556-276X-6-269