Figure 6.

HRXTEM analyses on the samples annealed at different temperatures. Images on the samples annealed at 1600 (a), 1700 (b) and 2000°C (c), and corresponding linescans ((d), (e) and (f)), showing 3, 8 and 18 layers grown on the surface of 4H-SiC, respectively.

Vecchio et al. Nanoscale Research Letters 2011 6:269   doi:10.1186/1556-276X-6-269
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