Table 1

Summary of HVPE growth conditions for GaN NWs carried out on 0.5 nm Au/Si(001) at T = 900°C for 60 min via the reaction of Ga with 20 sccms of NH3 and N2:(10-100%) H2

N2 (sccm)

H2 (sccm)

H2 (%)

L (μm)


CVD817

90

10

10

2.3

CVD818

40

10

20

3.4

CVD819

23

10

30

4.2

CVD821

15

10

40

4.7

CVD822

10

10

50

5.2

CVD823

-

100

100

11.3


Also listed are the average lengths of the GaN NWs.

Zervos and Othonos Nanoscale Research Letters 2011 6:262   doi:10.1186/1556-276X-6-262

Open Data