Table 1 |
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|
Summary of HVPE growth conditions for GaN NWs carried out on 0.5 nm Au/Si(001) at T = 900°C for 60 min via the reaction of Ga with 20 sccms of NH3 and N2:(10-100%) H2 |
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|
N2 (sccm) |
H2 (sccm) |
H2 (%) |
L (μm) |
|
|
|
||||
|
CVD817 |
90 |
10 |
10 |
2.3 |
|
CVD818 |
40 |
10 |
20 |
3.4 |
|
CVD819 |
23 |
10 |
30 |
4.2 |
|
CVD821 |
15 |
10 |
40 |
4.7 |
|
CVD822 |
10 |
10 |
50 |
5.2 |
|
CVD823 |
- |
100 |
100 |
11.3 |
|
|
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|
Also listed are the average lengths of the GaN NWs. |
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|
Zervos and Othonos Nanoscale Research Letters 2011 6:262 doi:10.1186/1556-276X-6-262 |
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