Figure 2.

XRD of the GaN NWs grown using 10% H2 with peaks corresponding to the (100), (002), (101) crystallographic planes of the hexagonal wurtzite structure of GaN. The inset shows RT PL with a peak at 3.42 eV (≡362 nm).

Zervos and Othonos Nanoscale Research Letters 2011 6:262   doi:10.1186/1556-276X-6-262
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