|
Resolution: standard / high Figure 2.
XRD of the GaN NWs grown using 10% H2 with peaks corresponding to the (100), (002), (101) crystallographic planes of the
hexagonal wurtzite structure of GaN. The inset shows RT PL with a peak at 3.42 eV (≡362 nm).
Zervos and Othonos Nanoscale Research Letters 2011 6:262 doi:10.1186/1556-276X-6-262 |
