The MoS2 Nanotubes with Defect-Controlled Electric Properties
1 Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia
2 Institute of Metals and Technology, Lepi Pot 11, 1000 Ljubljana, Slovenia
3 Forschungszentrum Dresden-Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, D-01314 Dresden, Germany
4 Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
Citation and License
Nanoscale Res Lett 2011, 6:26 doi:10.1007/s11671-010-9765-0Published: 3 September 2010
We describe a two-step synthesis of pure multiwall MoS2 nanotubes with a high degree of homogeneity in size. The Mo6S4I6 nanowires grown directly from elements under temperature gradient conditions in hedgehog-like assemblies were used as precursor material. Transformation in argon-H2S/H2 mixture leads to the MoS2 nanotubes still grouped in hedgehog-like morphology. The described method enables a large-scale production of MoS2 nanotubes and their size control. X-ray diffraction, optical absorption and Raman spectroscopy, scanning electron microscopy with wave dispersive analysis, and transmission electron microscopy were used to characterize the starting Mo6S4I6 nanowires and the MoS2 nanotubes. The unit cell parameters of the Mo6S4I6 phase are proposed. Blue shift in optical absorbance and metallic behavior of MoS2 nanotubes in two-probe measurement are explained by a high defect concentration.