Figure 3.

Evolution of Coulomb peaks under the influence of a magnetic field in different gate voltage regimes (Vb = 200 μV). (a) More on the hole side. (b) More on the electron side. In contrast to (a) Vrg = -2.15 V is applied to the right gate in (b). The effect of the right gate to the dot is taken into account in the back gate scale to allow comparison with Figure 1b. (c, d) Reproducibility of the measurement for different magnetic field sweep directions (0-7 T in (c), 7-0 T in (d)). The right side gate is changed according to Vrg = -0.57·Vbg - 1.59 V (see Figure 2), with an applied bias of Vb = 200 μV.

Güttinger et al. Nanoscale Research Letters 2011 6:253   doi:10.1186/1556-276X-6-253
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