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Can graphene make better HgCdTe infrared detectors?

Wen Xu12*, Youpin Gong3, Liwei Liu3*, Hua Qin3 and Yanli Shi4

Author affiliations

1 Department of Physics, Yunnan University, Kunming 650091, China

2 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China

3 Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China

4 Kunming Institute of Physics, Kunming, China

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Citation and License

Nanoscale Research Letters 2011, 6:250  doi:10.1186/1556-276X-6-250

Published: 23 March 2011


We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT) thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.