Table 1

Oxidation rates of AFM-LO and thermal oxidation, as well as theoretical planar atomic density at three different plane orientations of 4H-SiC orientations with doping concentration profiles of 4H-SiC

Process

Oxide height (nm)


a-plane 4H-SiC

c-plane 4H-SiC

m-plane 4H-SiC


Thermal oxidation (nm)

109.1

153.7

81.1

Planar atomic density (atoms/cm2)

7.45

12.17

6.42

Local oxidation (nm)

6.5

30

13

Doping concentration (×1018 cm-2)

5.9

9.6

9.3


Ahn et al. Nanoscale Research Letters 2011 6:235   doi:10.1186/1556-276X-6-235

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