Table 1 |
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|
Oxidation rates of AFM-LO and thermal oxidation, as well as theoretical planar atomic density at three different plane orientations of 4H-SiC orientations with doping concentration profiles of 4H-SiC |
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|
Process |
Oxide height (nm) |
||
|
|
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|
a-plane 4H-SiC |
c-plane 4H-SiC |
m-plane 4H-SiC |
|
|
|
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|
Thermal oxidation (nm) |
109.1 |
153.7 |
81.1 |
|
Planar atomic density (atoms/cm2) |
7.45 |
12.17 |
6.42 |
|
Local oxidation (nm) |
6.5 |
30 |
13 |
|
Doping concentration (×1018 cm-2) |
5.9 |
9.6 |
9.3 |
|
|
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|
Ahn et al. Nanoscale Research Letters 2011 6:235 doi:10.1186/1556-276X-6-235 |
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