Figure 5.

AFM images and cross-sectional curves of oxide lines on a-plane 4H-SiC obtained under different scan speeds: (a) 8.376 μm/s; (b) 5.235 μm/s; (c) 2.094 μm/s; and (d) 1.047 μm/s.

Ahn et al. Nanoscale Research Letters 2011 6:235   doi:10.1186/1556-276X-6-235
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