Open Access Nano Express

Integrated sensitive on-chip ion field effect transistors based on wrinkled InGaAs nanomembranes

Stefan M Harazim*, Ping Feng, Samuel Sanchez, Christoph Deneke, Yongfeng Mei and Oliver G Schmidt

Author Affiliations

Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany

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Nanoscale Research Letters 2011, 6:215  doi:10.1186/1556-276X-6-215

Published: 14 March 2011

Abstract

Self-organized wrinkling of pre-strained nanomembranes into nanochannels is used to fabricate a fully integrated nanofluidic device for the development of ion field effect transistors (IFETs). Constrained by the structure and shape of the membrane, the deterministic wrinkling process leads to a versatile variation of channel types such as straight two-way channels, three-way branched channels, or even four-way intersection channels. The fabrication of straight channels is well controllable and offers the opportunity to integrate multiple IFET devices into a single chip. Thus, several IFETs are fabricated on a single chip using a III-V semiconductor substrate to control the ion separation and to measure the ion current of a diluted potassium chloride electrolyte solution.