|
Resolution: standard / high Figure 2.
RHEED pattern of GaAs (100) surface after Ga-assisted deoxidation and subsequent quick
anneal under As4 atmosphere. The usual 2 × 4 reconstruction is observed indicating the successful removal of
the native oxide.
Helfrich et al. Nanoscale Research Letters 2011 6:211 doi:10.1186/1556-276X-6-211 |
