Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth
1 DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
2 Institute of Nanotechnology (INT) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
3 Laboratorium für Elektronenmikroskopie (LEM), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
Citation and License
Nanoscale Research Letters 2011, 6:211 doi:10.1186/1556-276X-6-211Published: 11 March 2011
In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.