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Open Access Nano Express

Investigation of pre-structured GaAs surfaces for subsequent site-selective InAs quantum dot growth

Mathieu Helfrich1, Roland Gröger2, Alexander Förste2, Dimitri Litvinov3, Dagmar Gerthsen3, Thomas Schimmel12 and Daniel M Schaadt1*

Author affiliations

1 DFG-Center for Functional Nanostructures (CFN) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

2 Institute of Nanotechnology (INT) and Institut für Angewandte Physik, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

3 Laboratorium für Elektronenmikroskopie (LEM), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

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Citation and License

Nanoscale Research Letters 2011, 6:211  doi:10.1186/1556-276X-6-211

Published: 11 March 2011

Abstract

In this study, we investigated pre-structured (100) GaAs sample surfaces with respect to subsequent site-selective quantum dot growth. Defects occurring in the GaAs buffer layer grown after pre-structuring are attributed to insufficient cleaning of the samples prior to regrowth. Successive cleaning steps were analyzed and optimized. A UV-ozone cleaning is performed at the end of sample preparation in order to get rid of remaining organic contamination.