Figure 6.

Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the ΔM spectra.

Yu et al. Nanoscale Research Letters 2011 6:210   doi:10.1186/1556-276X-6-210
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