|
Resolution: standard / high Figure 6.
Calculated anisotropic transition probability ΔM of InxGa1-xAs/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh,
and 1e1lh in the ΔM spectra.
Yu et al. Nanoscale Research Letters 2011 6:210 doi:10.1186/1556-276X-6-210 |
