Figure 5.

Calculated anisotropic transition probability ΔM and average transition probability M of InxGa1-xAs/GaAs QW with well width 3, 5 and 7 nm, respectively. The optical anisotropy is induced by (a) anisotropic interface structures, (b) anisotropic strain effect, (c) In segregation effect and (d) both anisotropic interface structures and In segregation effect. The vertical lines indicate the energy positions of the transitions 1e1hh (solid) and 1e1lh (dotted). And the vertical arrows indicate the positions of transitions 1e2hh (upward arrows), leh* (downward arrows), and 2e2hh (downward arrows).

Yu et al. Nanoscale Research Letters 2011 6:210   doi:10.1186/1556-276X-6-210
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