Figure 3.

RD spectra of 5 nm-In0.2Ga0.8As/GaAs QW under different strain ϵxy in unit of e0 = 3.23 × 10-5. The spectra are measured at room temperature and shifted vertically for clarity. The oblique lines indicate the energy positions of the transitions 1e1hh, 1e2hh, and 1e1lh in the RD spectra.

Yu et al. Nanoscale Research Letters 2011 6:210   doi:10.1186/1556-276X-6-210
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