Table 1 |
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|
Devices |
||||
|
Device |
Dopant position |
Dopant concentration (×1011 cm-2) |
Number of electrons per QD |
Barrier height (meV) |
|
|
||||
|
B44 |
QD layer |
2.7 |
2.4 |
25 |
|
B45 |
Middle of AlGaAs layers |
2.7 |
2.8 |
70 |
|
B46 |
Modulation dopping |
2.7 |
2.8 |
60 |
|
B52 |
QD layer |
5.4 |
4.7 |
79 |
|
B53 |
Middle of AlGaAs layers |
5.4 |
6.1 |
130 |
|
B54 |
Middle of AlGaAs layers |
8.1 |
9 |
200 |
|
|
||||
|
Mitin et al. Nanoscale Res Lett 2011 6:21 doi:10.1007/s11671-010-9767-y |
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