Table 1

Devices

Device

Dopant position

Dopant concentration (×1011 cm-2)

Number of electrons per QD

Barrier height (meV)


B44

QD layer

2.7

2.4

25

B45

Middle of AlGaAs layers

2.7

2.8

70

B46

Modulation dopping

2.7

2.8

60

B52

QD layer

5.4

4.7

79

B53

Middle of AlGaAs layers

5.4

6.1

130

B54

Middle of AlGaAs layers

8.1

9

200


Mitin et al. Nanoscale Res Lett 2011 6:21   doi:10.1007/s11671-010-9767-y

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