Figure 1.

Characteristics of the Schottky junctions on Si/CrSi2 NC/Si structures: I-V measured at room temperature (a) and at 77 K (b); C-V measured at room temperature (c) and at 77 K (d).

Dózsa et al. Nanoscale Research Letters 2011 6:209   doi:10.1186/1556-276X-6-209
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