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Resolution: standard / high Figure 1.
Characteristics of the Schottky junctions on Si/CrSi2 NC/Si structures: I-V measured at room temperature (a) and at 77 K (b); C-V measured at room temperature (c) and at 77 K (d).
Dózsa et al. Nanoscale Research Letters 2011 6:209 doi:10.1186/1556-276X-6-209 |
