Figure 5.

Calculated band-edge diagram of the strained Ge pyramid in Si(001) along the growth axis with the relevant interband transitions. For CB Δ and L points are shown. The electron and hole energy levels are indicated by horizontal dashed lines.

Yakimov et al. Nanoscale Research Letters 2011 6:208   doi:10.1186/1556-276X-6-208
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