Figure 1.

Schematic cross section of the QD device used to make photocur-rent and ER measurements. The structure is that of a p-i-n diode with 20 layers of Ge QDs in the depleted intrinsic region.

Yakimov et al. Nanoscale Research Letters 2011 6:208   doi:10.1186/1556-276X-6-208
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