Open Access Nano Express

Electromodulated reflectance study of self-assembled Ge/Si quantum dots

Andrew Yakimov*, Aleksandr Nikiforov, Aleksei Bloshkin and Anatolii Dvurechenskii

Author Affiliations

Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, Russia

For all author emails, please log on.

Nanoscale Research Letters 2011, 6:208  doi:10.1186/1556-276X-6-208

Published: 9 March 2011

Abstract

We perform an electroreflectance spectroscopy of Ge/Si self-assembled quantum dots in the near-infrared and in the mid-infrared spectral range. Up to three optical transitions are observed. The low-energy resonance is proposed to correspond to a band-to-continuum hole transition in the Ge valence band. The other two modulation signals are attributed to the spatially direct transitions between the electrons confined in the L and Δ(4) valleys of the Ge conduction band, and the localized hole states at the Γ point.