Intensity of the defect luminescence at 1,250 nm in the BSF. The intensity is clearly increased at the right side of the BSF, which indicates a higher defect density here. This could cause the low lifetimes at the interface between BSF and silicon bulk.
Gundel et al. Nanoscale Research Letters 2011 6:197 doi:10.1186/1556-276X-6-197