Figure 7.

Sketch of the three possible mechanisms of atom rearrangement at the inverted GaAs-on-InGaP interface. 1): indium segregation in the growth direction, 2): P/As exchange across the interface, and 3): P/As intermixing in the growing GaAs QW (see text).

Frigeri et al. Nanoscale Research Letters 2011 6:194   doi:10.1186/1556-276X-6-194
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