Table 1

Numerical parameters used in the simulation for the GaInNAs/GaAs sample [7]

Material

Thickness (Å)

Doping (m-3)


GaAs (cap)

500

Be: 1 × 1024

×3

GaAs (barrier)

200

Be: 1 × 1024

×3

GaAs (spacer)

50

UD

×3

Ga1-xInxNyAs1-y QW

70

UD

×3

GaAs (spacer)

50

UD

×3

GaAs (barrier)

200

Be: 1x1024

×3

GaAs (buffer)

500

UD

×3


Semi-insulating GaAs substrate

Khalil et al. Nanoscale Research Letters 2011 6:191   doi:10.1186/1556-276X-6-191

Open Data