Table 1 |
|||
|
Numerical parameters used in the simulation for the GaInNAs/GaAs sample [7] |
|||
|
Material |
Thickness (Å) |
Doping (m-3) |
|
|
|
|||
|
GaAs (cap) |
500 |
Be: 1 × 1024 |
×3 |
|
GaAs (barrier) |
200 |
Be: 1 × 1024 |
×3 |
|
GaAs (spacer) |
50 |
UD |
×3 |
|
Ga1-xInxNyAs1-y QW |
70 |
UD |
×3 |
|
GaAs (spacer) |
50 |
UD |
×3 |
|
GaAs (barrier) |
200 |
Be: 1x1024 |
×3 |
|
GaAs (buffer) |
500 |
UD |
×3 |
|
|
|||
|
Semi-insulating GaAs substrate |
|||
|
Khalil et al. Nanoscale Research Letters 2011 6:191 doi:10.1186/1556-276X-6-191 |
|||
