Table 1

The binding energy <a onClick="popup('http://www.nanoscalereslett.com/content/6/1/190/mathml/M1','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/6/1/190/mathml/M1">View MathML</a>, the increasing rate of lattice constant relative to grapheme ϵrare = (a-aGraphene)/(aGraphene), the energy gain of the ferromagnetic state EM = EFM - ENM, the total magnetic moment mtotal, the carbon atomic magnetic moment <a onClick="popup('http://www.nanoscalereslett.com/content/6/1/190/mathml/M2','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/6/1/190/mathml/M2">View MathML</a>, and the electronic property for each semi-hydrogenated sheet

Eb(eV/H)

εrate (%)

EM(meV/Ca)

mtotal B)

<a onClick="popup('http://www.nanoscalereslett.com/content/6/1/190/mathml/M2','MathML',630,470);return false;" target="_blank" href="http://www.nanoscalereslett.com/content/6/1/190/mathml/M2">View MathML</a> (μB)

Property


Graphone

-0.63

2.75

-271

4.00

0.79

Semiconductor (0.4 eV)

H-BC3

-1.53

6.59

-51

1.00

0.31

Half-metal (1.18 eV)

H-BC5

-1.10

4.47

-47

1.00

0.31

Half-metal (1.12 eV)

H-BC7

-0.94

4.11

-84

2.00

0.34/0.72

Half-metal (1.50 eV)

B-doped graphone

-0.67

2.96

-221

14.00

0.35/0.78

Half-metal (2.25 eV)


The numerical values are listed following "Semiconductor" is the band gap, and those listed following "Half-metal" are half-metal gaps

Ding et al. Nanoscale Research Letters 2011 6:190   doi:10.1186/1556-276X-6-190

Open Data