|
Resolution: standard / high Figure 5.
H concentration, extracted from Figure 4, as a function of the annealing time at 350°C
in a-Si (solid black line) and a-Ge (dash blue line) single layers hydrogenated at
0.8 ml/min.
Frigeri et al. Nanoscale Research Letters 2011 6:189 doi:10.1186/1556-276X-6-189 |
