Figure 5.

H concentration, extracted from Figure 4, as a function of the annealing time at 350°C in a-Si (solid black line) and a-Ge (dash blue line) single layers hydrogenated at 0.8 ml/min.

Frigeri et al. Nanoscale Research Letters 2011 6:189   doi:10.1186/1556-276X-6-189
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