|
Resolution: standard / high Figure 4.
H concentration, as determined with ERDA, as a function of the H flow rate in a-Si
and a-Ge single layers before and after annealing at 350°C for 1 and 4 h.
Frigeri et al. Nanoscale Research Letters 2011 6:189 doi:10.1186/1556-276X-6-189 |
