Figure 3.

IR absorbance spectra in the stretching mode range of the wave number for a-Si/a-Ge MLs sputtered under H flow rate of 0.8 ml/min. B1 is the spectrum of the as-deposited layer, B2 the spectrum after annealing at 400°C for 1 h and B3 the one after annealing at 400°C for 10 h.

Frigeri et al. Nanoscale Research Letters 2011 6:189   doi:10.1186/1556-276X-6-189
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