Figure 2.

Calibration of H incorporation with ERDA. (a) 1.6 MeV 4He+ ERDA spectra of H in the a-Si single layers hydrogenated at flow rates of 0.4, 0.8 and 1.5 ml/min (#4, #8 and #15, respectively, in the plot). (b) Total H concentration in a-Si (solid black line) and a-Ge (dash blue line) layers as a function of the H flow rate as determined by ERDA.

Frigeri et al. Nanoscale Research Letters 2011 6:189   doi:10.1186/1556-276X-6-189
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