Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

Cesare Frigeri; Miklós Serényi; Nguyen Q Khánh; Attila Csik; Ferenc Riesz; Zoltán Erdélyi; Lucia Nasi; Dezső L Beke; Hans-Gerd Boyen

doi:10.1186/1556-276X-6-189

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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

Cesare Frigeri^*, Miklós Serényi, Nguyen Q Khánh, Attila Csik, Ferenc Riesz, Zoltán Erdélyi, Lucia Nasi, Dezső L Beke and Hans-Gerd Boyen

* Corresponding author: Cesare Frigeri frigeri@imem.cnr.it

Nanoscale Research Letters 2011, 6:189 doi:10.1186/1556-276X-6-189

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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers