|
Resolution: standard / high Figure 5.
Evolution of flat-band voltage as a function of waiting time for the MIS structures
after Ge+ ion implantation at 5 keV followed by thermal annealing at 800°C and subjected to
a stress voltages of +6 V for electron charging, and -6 V for hole charging for 3s. The constant-capacitance method at flat-band point was used for this measurement.
Sahu et al. Nanoscale Research Letters 2011 6:177 doi:10.1186/1556-276X-6-177 |
