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Resolution: standard / high Figure 1.
Cross-sectional HREM images of Ge+-implanted SiN/HfO2/SiO2 stack layers. Cross-sectional HREM images of Ge+-implanted SiN layers with HfO2/SiO2 stack tunnel dielectrics at two different energies (a) 3 keV, and (b) 5 kev, with dose of 1.5 × 1016 cm-2, followed by a post-implantation thermal annealing at 800°C in N2. In the images, the surface of SiN layer is indicated by a white line
Sahu et al. Nanoscale Research Letters 2011 6:177 doi:10.1186/1556-276X-6-177 |
