Figure 3.

Conductivity behavior for vertical transport in p-type GaN/Al0.3Ga0.7N SLs with barrier and well widths equal to 2 nm, as a function of (a) the acceptor concentration N2D and (b) the Fermi energy EF.

dos Santos et al. Nanoscale Research Letters 2011 6:175   doi:10.1186/1556-276X-6-175
Download authors' original image