|
Resolution: standard / high Figure 2.
Conductivity behavior for vertical transport in p-type GaAs/Al0.3Ga0.7As SLs with barrier and well widths equal to 2 nm, as a function of (a) the acceptor
concentration N2D and (b) the Fermi energy EF.
dos Santos et al. Nanoscale Research Letters 2011 6:175 doi:10.1186/1556-276X-6-175 |
