Study of the vertical transport in p-doped superlattices based on group III-V semiconductors
1 Departamento de Física, Universidade Federal Rural de Pernambuco, R. Dom Manoel de Medeiros s/n, 52171-900 Recife, PE, Brazil
2 Instituto de Física de São Carlos, USP, CP 369, 13560-970, São Carlos, SP, Brazil
3 Department of Physics, Texas State University, 78666 San Marcos, TX, USA
4 Departamento de Física, Universidade Federal de Pernambuco, Cidade Universitária, 50670-901, Recife, PE, Brazil
Citation and License
Nanoscale Research Letters 2011, 6:175 doi:10.1186/1556-276X-6-175Published: 25 February 2011
The electrical conductivity σ has been calculated for p-doped GaAs/Al0.3Ga0.7As and cubic GaN/Al0.3Ga0.7N thin superlattices (SLs). The calculations are done within a self-consistent approach to the theory by means of a full six-band Luttinger-Kohn Hamiltonian, together with the Poisson equation in a plane wave representation, including exchange correlation effects within the local density approximation. It was also assumed that transport in the SL occurs through extended minibands states for each carrier, and the conductivity is calculated at zero temperature and in low-field ohmic limits by the quasi-chemical Boltzmann kinetic equation. It was shown that the particular minibands structure of the p-doped SLs leads to a plateau-like behavior in the conductivity as a function of the donor concentration and/or the Fermi level energy. In addition, it is shown that the Coulomb and exchange-correlation effects play an important role in these systems, since they determine the bending potential.