Figure 3.

C-V data of single HfSiO layer and HfSiO/SRSO/HfSiO structure measured at different frequencies. Comparison of C-V data for single HfSiO layer (a) and HfSiO/SRSO/HfSiO structure (b) measured at different frequencies. RSi = 12%. Annealing treatment at TA = 950°C, tA = 15 min, N2 flow. Inset of figure (b) demonstrates variation of ΔVfb versus applied frequency at 6 V sweep voltage.

Khomenkova et al. Nanoscale Research Letters 2011 6:172   doi:10.1186/1556-276X-6-172
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