Figure 1.

C-V characteristics of MIS structures containing pure HfO2 and HfSiO films. High-frequency C-V characteristics of pure and Si-rich HfO2 single layers versus Si content in the films (a) and deposition temperature (b) measured at 100 kHz. The C-V curves were normalized to their respective accumulation capacitance. All the high-k films were annealed at 800°C for 15 min. Deposition temperature is mentioned in the figures.

Khomenkova et al. Nanoscale Research Letters 2011 6:172   doi:10.1186/1556-276X-6-172
Download authors' original image