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Hf-based high-k materials for Si nanocrystal floating gate memories

Larysa Khomenkova1*, Bhabani S Sahu2, Abdelilah Slaoui2 and Fabrice Gourbilleau1

Author Affiliations

1 CIMAP, UMR CNRS/CEA/ENSICAEN/UCBN 6252, Ensicaen, 6 Bd Mal Juin, 14050 Caen Cedex 4, France

2 InESS/UDS-CNRS, 23 rue du Loess, 67037 Strasbourg, France

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Nanoscale Research Letters 2011, 6:172  doi:10.1186/1556-276X-6-172

Published: 24 February 2011


Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices.