Figure 1.

Comparison of devices. (a) Linear current density-voltage characteristics of MIS structure based on SiO2-Sinc and SiOxNy-Sinc layer. Inset: Schematic cross section of the tested MIS structures, (b) current density-voltage characteristics of MIS structure based on SiOxNy-Sinc layer plotted in semi log scale.

Jacques et al. Nanoscale Research Letters 2011 6:170   doi:10.1186/1556-276X-6-170
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